VODB

VODPE3

VODPE2

VODPE1

1-bit

1 to N bits

1-bit

1 to N bits

0 dB

-3 dB

-6 dB

-9 dB

0V

DS42MB200

SNOSAT8G – JANUARY 2006 – REVISED APRIL 2013

www.ti.com

Figure 2. Driver Pre-Emphasis Differential Waveform (showing all 4 pre-emphasis steps)

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

Supply Voltage (VCC)

−0.3V to 4V

CMOS/TTL Input Voltage

−0.3V to (VCC +0.3V)

CML Input/Output Voltage

−0.3V to (VCC +0.3V)

Junction Temperature

+125°C

Storage Temperature

−65°C to +150°C

Lead Temperature (Soldering, 4 sec.)

+260°C

Thermal Resistance,

θJA

33.7°C/W

Thermal Resistance,

θJC-top

20.7°C/W

Thermal Resistance,

θJC-bottom

5.8°C/W

Thermal Resistance,

ΦJB

18.2°C/W

ESD Rating HBM, 1.5 k

Ω, 100 pF

6 kV

ESD Rating Machine Model

250V

(1)

“Absolute Maximum Ratings” are the ratings beyond which the safety of the device cannot be verified. They are not meant to imply that

the device should be operated at these limits.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

Recommended Operating Ratings

Min

Typ

Max

Units

Supply Voltage (VCC-GND)

3.135

3.3

3.465

V

Supply Noise Amplitude (10 Hz to 2 GHz)

20

mVPP

Ambient Temperature

-40

85

°C

Case Temperature

100

°C

6

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