Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

ISD

Modified MOSFET Symbol

Showing the Integral

Reverse P-N Junction

Rectifier

-

-

14

A

Pulse Source to Drain Current (Note 3)

ISDM

-

-

56

A

Source to Drain Diode Voltage (Note 2)

VSD

TJ = 25

oC, I

SD = 14A, VGS = 0V (Figure 13)

-

-

1.4

V

Reverse Recovery Time

trr

TJ = 150

oC, I

SD = 13A, dISD/dt = 100A/µs

-

1300

-

ns

Reverse Recovery Charge

QRR

TJ = 150

oC, I

SD = 13A, dISD/dt = 100A/µs

-

7.4

-

µC

NOTES:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ = 25

oC, L = 7.9mH, R

G = 25Ω , peak IAS = 14A.

Typical Performance Curves

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

G

D

S

0

50

100

150

0

TC, CASE TEMPERATURE (

oC)

0.2

0.4

0.6

0.8

1.0

1.2

0

50

100

TC, CASE TEMPERATURE (

oC)

150

25

75

125

15

12

9

6

3

1

0.1

10-3

10-5

10-4

10-3

10-2

0.1

1

10

t1, RECTANGULAR PULSE DURATION (s)

SINGLE PULSE

PDM

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC + TC

t1

t2

0.1

0.02

0.2

0.5

0.01

0.05

10-2

IRFP450