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2N5322 数据表(PDF) 2 Page - STMicroelectronics

部件名 2N5322
功能描述  SMALL SIGNAL PNP TRANSISTORS
PDF  4 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

2N5322 数据表(HTML) 2 Page - STMicroelectronics

  2N5322 Datasheet HTML 1Page - STMicroelectronics 2N5322 Datasheet HTML 2Page - STMicroelectronics 2N5322 Datasheet HTML 3Page - STMicroelectronics 2N5322 Datasheet HTML 4Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
17.5
175
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = -80 V
for 2N5322
VCB = -60 V
for 2N5323
-0.5
-5
µA
µA
IEBO
Collector Cut-off
Current (IC = 0)
VEB = -5 V
for 2N5322
VEB = -4 V
for 2N5323
-0.1
-0.5
µA
µA
V(BR)CEV
Collector-Emitter
Breakdown Voltage
(VBE = 1.5V)
IC = -100
µA
for 2N5322
for 2N5323
-100
-75
V
V
V(BR)CEO
∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = -10 mA
for 2N5322
for 2N5323
-75
-50
V
V
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = -100
µA
for 2N5322
for 2N5323
-6
-5
V
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = -500 mA
IB = -50 mA
for 2N5322
for 2N5323
-0.7
-1.2
V
V
VBE
∗
Base-Emitter Voltage
IC = -500 mA
VCE = -4 V
for 2N5322
for 2N5323
-1.1
-1.4
V
V
hFE
∗
DC Current Gain
for 2N5322
IC = -500 mA
VCE = -4 V
IC = -1 A
VCE = -2 V
for 2N5323
IC = -500 mA
VCE = -4 V
30
10
40
130
250
fT
Transition Frequency
IC = -50 mA VCE = -4 V
f = 10 MHz
50
MHz
ton
Turn-on Time
IC = -500 mA
VCC = -30 V
IB1 = -50 mA
100
ns
toff
Turn-off Time
IC = -500 mA
VCC = -30 V
IB1 = -IB2 = -50 mA
1000
ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1 %
2N5322/2N5323
2/4



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