2N5415 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

17.5

175

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

for 2N5415

VCB = -175 V

for 2N5416

VCB = -280 V

-50

µA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = -150 V

-50

µA

IEBO

Emitter Cut-off Current

(IC = 0)

for 2N5415

VEB = -4 V

for 2N5416

VEB = -6 V

-20

µA

VCER

∗

Collector-Emitter

Sustaining Voltage

IC = -50 mA

RBE = 50

Ω for 2N5416

-350

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = -10 mA

for 2N5415

for 2N5416

-200

-300

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = -50 mA

IB = -5 mA

-2.5

VBE

∗

Base-Emitter Voltage

IC = -50 mA

VCE = -10 V

-1.5

hFE

∗

DC Current Gain

IC = -50 mA

VCE = -10 V

for 2N5415

for 2N5416

150

120

hfe

Small Signal Current

Gain

IC = -5 mA

VCE = -10 V

f = 1KHz

Transition frequency

IC = -10 mA

VCE = -10 V

f = 5MHz

MHz

CCBO

Collector Base

Capacitance

IE = 0

VCB = -10 V

f = 1MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

2N5415 / 2N5416

2/4

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