2N5681 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

17.5

175

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEV

Collector Cut-off

Current (VBE = -1.5V)

for 2N5681

VCE = 100 V

for 2N5682

VCE = 120 V

Tc = 150

for 2N5681

VCE = 100 V

for 2N5682

VCE = 120 V

µA

ICBO

Collector Cut-off

Current (IE = 0)

for 2N5681

VCB = 100 V

for 2N5682

VCB = 120 V

µA

ICEO

Collector Cut-off

Current (IB = 0)

for 2N5681

VCB = 70 V

for 2N5682

VCB = 80 V

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 4 V

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 10 mA

for 2N5681

for 2N5682

100

120

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 250 mA

IB = 25 mA

IC = 500 mA

IB = 50 mA

IC = 1 A

IB = 200 mA

0.6

VBE

∗

Base-Emitter Voltage

IC = 250 mA

VCE = 2 V

hFE

∗

DC Current Gain

IC = 250 mA

VCE = 2 V

IC = 1 A

VCE = 2 V

150

hfe

Small Signal Current

Gain

IC = 0.2 A

VCE = 1.5 V

f = 1KHz

Transition frequency

IC = 100 mA

VCE = 10 V

f =10MHz

MHz

CCBO

Collector Base

Capacitance

IE = 0

VCB = 20 V

f = 1MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

2N5681 / 2N5682

2/4

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