2N5884 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

0.875

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEV

Collector Cut-off

Current (VBE = -1.5V)

VCE = rated VCEO

Tc = 150

o C

ICBO

Collector Cut-off

Current (IE = 0)

VCE = rated VCBO

1mA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 40 V

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 200 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 15 A

IB = 1.5 A

IC = 25 A

IB = 6.25 A

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 25 A

IB = 6.25 A

2.5

VBE

∗

Base-Emitter Voltage

IC = 10 A

VCE = 4 V

1.5

hFE

∗

DC Current Gain

IC = 3 A

VCE = 4 V

IC = 10 A

VCE = 4 V

IC = 25 A

VCE = 4 V

100

hfe

Small Signal Current

Gain

IC = 3 A

VCE = 4 V

f = 1KHz

Transition frequency

IC = 1 A

VCE = 10 V

f =1 MHz

MHz

CCBO

Collector Base

Capacitance

IE = 0

VCB = 10 V

f = 1MHz

for NPN type

for PNP type

500

1000

Rise Time

IC = 10 A

VCC = 30 V

IB1 = -IB2 = 1A

0.7

µs

Storage Time

µs

Fall Time

0.8

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

2N5884 / 2N5886

2/4

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