2N6036 datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

3.12

83.3

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICEX

Collect or Cut-off

Current (VBE = -1.5V)

VCE =rated VCEO

Tc =125

o C

0.1

0.5

ICBO

Collect or Cut-off

Current (IE =0)

VCE =rated VCBO

0.1

ICEO

Collect or Cut-off

Current (IB =0)

VCE =rated VCEO

0.1

IEBO

Emitt er Cut-off Current

(IC =0)

VEB =5 V

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

IC =100 mA

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =2 A

IB =8 mA

IC =4 A

IB =40 mA

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =4 A

IB =40 mA

VBE

∗

Base-Emitt er Voltage

IC =2 A

VCE =3 V

2.8

hFE

∗

DC Current G ain

IC =0. 5 A

VCE =3 V

IC =2 A

VCE =3 V

IC =4 A

VCE =3 V

500

750

100

15000

hfe

Small Signal Current

Gain

IC =0. 75 A

VCE =10 V

f = 1KHz

CCBO

Collect or Base

Capacitance

IE =0

VCB =10 V

f = 1MHz

for NPN typ es

for PNP types

100

200

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

Derating Curve

2N6036/2N6039

2/6

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