2N6111 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

3.12

oC/W

Rthj-amb

Thermal Resistance Junction-ambient

Max

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEX

Collector Cut-off

Current (VBE = - 1.5V)

for 2N6107

VCE = 80 V

for 2N6111

VCE = 40 V

TC = 150

for 2N6107

VCE = 70 V

for 2N6111

VCE = 30 V

0.1

ICEO

Collector Cut-off

Current (IB = 0)

for 2N6107

VCE = 60 V

for 2N6111

VCE = 20 V

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)

∗ Collector-emitter

Sustaining Voltage

IC = 0.1 A

for 2N6107

for 2N6111

VCER(sus)

∗ Collector-emitter

Sustaining Voltage

IC = 0.1 A

RBE = 100

Ω

for 2N6107

for 2N6111

VCE(sat)

∗ Collector-emitter

Saturation Voltage

IC = 3 A

IB = 0.3 A

for 2N6107

IC = 2 A

IB = 0.2 A

for 2N6111

IC = 7 A

IB = 3.0 A

3.5

VBE(on)

∗ Base-emitter Voltage

IC = 3 A

VCE = 4 V

for 2N6107

IC = 2 A

VCE = 4 V

for 2N6111

IC = 7 A

VCE = 4 V

1.5

hFE

∗

DC Current Gain

IC = 3 A

VCE = 4 V

for 2N6107

IC = 2 A

VCE = 4 V

for 2N6111

IC = 7 A

VCE = 4 V

2.3

150

hfe

Small Signal Current

Gain

IC = 0.5 A

VCE = 4 V

f = 50 KHz

Transition-Frequency

IC = 0.5 A

VCE = 4 V

MHz

Ccbo

Collector-base

Capacitance

VCB = 10 V

f = 1 MHz

250

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

For PNP types voltage and current values are negative.

For characteristic curves see the bd534 (PNP) series.

2N6107/2N6111

2/4

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