2N6284 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

1.09

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEV

Collector Cut-off

Current (VBE = -1.5V)

VCE = rated VCEO

Tc = 150

o C

0.5

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 50 V

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 100 mA

100

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 10 A

IB = 40 mA

IC = 20 A

IB = 200 mA

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 20 A

IB = 200 mA

VBE

∗

Base-Emitter Voltage

IC = 10 A

VCE = 3 V

2.8

hFE

∗

DC Current Gain

IC = 10 A

VCE = 3 V

IC = 20 A

VCE = 3 V

750

100

18000

hfe

Small Signal Current

Gain

IC = 3 A

VCE = 10 V

f = 1KHz

300

CCBO

Collector Base

Capacitance

IE = 0

VCB = 10 V

f = 100KHz

for NPN types

for PNP types

400

600

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

2N6284 / 2N6287

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