July 2000

2000 Fairchild Semiconductor Corporation

FDS6912 Rev F (W)

FDS6912

Dual N-Channel Logic Level PWM Optimized PowerTrench







 MOSFET

General Description

These N-Channel Logic Level MOSFETs have been

designed specifically to improve the overall efficiency of

DC/DC

converters

using

either

synchronous

or

conventional switching PWM controllers.

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

RDS(ON) specifications.

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

Features

• 6 A, 30 V.

RDS(ON) = 0.028

Ω @ V

GS = 10 V

RDS(ON) = 0.042

Ω @ V

GS = 4.5 V.

• Optimized for use in switching DC/DC converters

with PWM controllers

• Very fast switching.

• Low gate charge

S2

SO-8

G2

S1

G1

D2

D2

D1

D1

4

3

2

1

5

6

7

8

Q1

Q2

Absolute Maximum Ratings

TA=25

oC unless otherwise noted

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

30

V

VGSS

Gate-Source Voltage

±25

V

ID

Drain Current

– Continuous

(Note 1a)

6A

– Pulsed

20

Power Dissipation for Dual Operation

2

Power Dissipation for Single Operation

(Note 1a)

1.6

(Note 1b)

1

PD

(Note 1c)

0.9

W

TJ, Tstg

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

78

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

40

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6912

FDS6912

13’’

12mm

2500 units