2N720A datasheet(2/4 Pages) STMICROELECTRONICS

2 / 4 page

ELECTRICAL CHARACTERISTICS(Tamb =25 °C unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

I CBO

Collector Cutoff Current

(IE =0)

VCB =90 V

V(B R)CBO

Collector–base Breakdown

Voltage

(IE =0)

I C =100 µA

120

V(BR)CE O *

Collector–emitter Breakdown

Voltage

(IB =0)

I C =30 mA

V(B R)E BO

Emitter–base Breakdown

Voltage

(IE =0)

I E =100 µA7

I EBO

Emitter Cuttoff Current

(IE =0)

VEB =5 V

VCE(sat)*

Collector–emitter Saturation

Voltage

I C =50 mA

I C =150 mA

I B =5 mA

I B =15 mA

1.2

VBE(sat)*

Base–emitter Saturation

Voltage

I C =50 mA

I C =150 mA

I B =5 mA

I B =15 mA

0.9

1.3

h FE*

DC Current Gain

I C =100

µA

I C =10 mA

I C =150 mA

VCE =10 V

120

–

h fe

High Frequency Current

Gain

I C =50 mA

f= 20 MHz

VCE = 10 V

2.5

–

C CBO

Collector–base Capacitance

IE =0

f = 1 MHz

VCB =10 V

C EBO

Emitter–base Capacitance

IC =0

f = 1 MHz

VEB = 0.5 V

* Pulsed : pulse duration = 300

µs, duty cycle = 1 %.

THERMAL DATA

Rth j-cas e

R th j-amb

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max

97.2

350

°C/W

2N720A

2/4

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