ST1S06APM datasheet(6/19 Pages) STMICROELECTRONICS

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Electrical characteristics

ST1S06

6/19

Electrical characteristics

Table 4.

Electrical characteristics for ST1S06

(VIN_SW =VIN_A =VINH =5V, VO=1.2V, CI =4.7µF, CO =22µF, L1 =3.3µH, TJ =-30 to 125°C

(unless otherwise specified. Typical values are referred to TJ = 25°C)

Note: 1 Guaranteed by design, but not tested in production

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Feedback voltage

784

800

816

IFB

VFB pin bias current

600

Minimum input voltage

IO= 10mA to 1.5A

2.7

Quiescent current

VINH > 1.2V

1.5

VINH < 0.4V, TJ = -30°C to 85°C

1µA

Output current

VI = 2.7 to 5.5V Note: 1

1.5

VINH

Inhibit threshold

Device ON, VI = 2.7 to 5.5V

1.3

Device ON, VI = 2.7 to 5V

1.2

Device OFF

0.4

IINH

Inhibit pin current

2µA

%VO/∆VI Reference line regulation

VI = 2.7V to 5.5V Note: 1

0.2

0.3

%VO/

∆VI

%VO/∆IO Reference load regulation

IO = 10mA to 1.5A Note: 1

0.2

0.3

%VO/

∆IO

PWMfS

PWM Switching frequency

VFB = 0.8V

1.2

1.5

1.8

MHz

DMAX

Maximum duty cycle

RDSON-N NMOS Switch on resistance

ISW = 750 mA

0.12

Ω

RDSON-P PMOS Switch on resistance

ISW = 750 mA

0.15

Ω

ISWL

Switching current limitation

Note: 1

2.3

Efficiency

Note: 1

IO = 10mA to 100mA, VO = 3.3V

IO = 100mA to 1.5A, VO = 3.3V

TSHDN

Thermal shutdown

130

150

°C

THYS

Thermal shutdown hysteresis

°C

%VO/∆IO Load transient response

IO = 100mA to 750mA, TJ = 25°C

tR = tF ≥ 200ns, Note: 1

-5

%VO

%VO/∆IO Short circuit removal response

IO = 10mA to IO=short, TJ = 25°C

Note: 1

-10

+10

%VO

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