数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

STB20NM50FD 数据表(PDF) 2 Page - STMicroelectronics

部件名 STB20NM50FD
功能描述  N-CHANNEL 500V - 0.22W - 20A TO-220/TO-220FP/D2PAK FDmesh??Power MOSFET (with FAST DIODE)
PDF  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB20NM50FD 数据表(HTML) 2 Page - STMicroelectronics

  STB20NM50FD Datasheet HTML 1Page - STMicroelectronics STB20NM50FD Datasheet HTML 2Page - STMicroelectronics STB20NM50FD Datasheet HTML 3Page - STMicroelectronics STB20NM50FD Datasheet HTML 4Page - STMicroelectronics STB20NM50FD Datasheet HTML 5Page - STMicroelectronics STB20NM50FD Datasheet HTML 6Page - STMicroelectronics STB20NM50FD Datasheet HTML 7Page - STMicroelectronics STB20NM50FD Datasheet HTML 8Page - STMicroelectronics STB20NM50FD Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 11 page
background image
STP20NM50FD - STF20NM50D - STB20NM50FD
2/11
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) ISD ≤ 20A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Value
Unit
STP20NM50FD
STB20NM50FD
STF20NM50D
VDS
Drain-source Voltage (VGS =0)
500
V
VDGR
Drain-gate Voltage (RGS =20 kΩ)
500
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuous) at TC = 25°C
20
20 (*)
A
ID
Drain Current (continuous) at TC = 100°C
14
14 (*)
A
IDM ( )
Drain Current (pulsed)
80
80 (*)
A
PTOT
Total Dissipation at TC =25°C
192
45
W
Derating Factor
1.2
0.36
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
20
V/ns
VISO
Insulation Winthstand Voltage (DC)
--
2000
V
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
TO-220 / D2PAK
TO-220FP
Rthj-case
Thermal Resistance Junction-case
Max
0.65
2.8
°C/W
Rthj-amb
Thermal Resistance Junction-ambient
Max
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
10
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25°C, ID =IAR,VDD =35 V)
700
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
500
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS = Max Rating
1µA
VDS = Max Rating, TC =125 °C
10
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ±30V
±100
nA
VGS(th
Gate Threshold Voltage
VDS =VGS,ID = 250 µA
34
5V
RDS(on)
Static Drain-source On
Resistance
VGS =10V,ID = 10A
0.22
0.25
Ω



Html Pages

1 2 3 4 5 6 7 8 9 10 11


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com