STP16NF06 datasheet(3/14 Pages) STMICROELECTRONICS

3 / 14 page

STP16NF06 - STP16NF06FP

Electrical ratings

3/14

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

TO-220FP

VDS

Drain-source voltage (VGS = 0)

VGS

Gate- source voltage

± 20

Drain current (continuous) at TC = 25°C

11(1)

Current limited by package’s thermal resistance

Drain current (continuous) at TC = 100°C

7.5(1)

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

44(1)

Ptot

Total dissipation at TC = 25°C

Derating factor

0.3

0.17

W/°C

dv/dt (3)

ISD ≤16A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX

Peak diode recovery voltage slope

V/ns

EAS

(4)

Starting Tj = 25 °C, ID = 8A, VDD = 30V

Single pulse avalanche energy

130

IAR

Avalanche current, repetitive or not-

repetitive

VISO

Insulation withstand voltage (DC)

2500

Tstg

Storage temperature

-55 to 175

°C

Max. operating junction temperature

Table 2.

Thermal data

TO-220

TO-220FP

Rthj-case

Thermal resistance junction-case max

3.33

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering purpose

300

°C

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