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STTH4R02 数据表(PDF) 4 Page - STMicroelectronics |
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STTH4R02 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 13 page ![]() Characteristics STTH4R02 4/13 Figure 3. Forward voltage drop versus forward current (maximum values) Figure 4. Relative variation of thermal impedance, junction to case, versus pulse duration (T0-220AC, DPAK) 0 10 20 30 40 50 60 70 80 90 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 I FM(A) T j=25°C T j=150°C VFM(V) 0.1 1.0 1.E-03 1.E-02 1.E-01 1.E+00 Z th(j-c)/Rth(j-c) Single pulse TO-220AC DPAK tp(s) Figure 5. Relative variation of thermal impedance, junction to case, versus pulse duration (TO-220FPAC) Figure 6. Relative variation of thermal impedance, junction to ambient, versus pulse duration (SMB) 0.0 0.1 1.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Z th(j-c)/Rth(j-c) Single pulse TO-220FPAC tp(s) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Z th(j-a)/Rth(j-a) SMB S Cu=1cm² tp(s) Figure 7. Relative variation of thermal impedance, junction to ambient, versus pulse duration (DO-201AB) Figure 8. Relative variation of thermal impedance, junction to ambient, versus pulse duration (SMC) 1 10 100 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Z th(j-a)(°C/W) Single pulse DO201AB tp(s) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Z th(j-a)/Rth(j-a) SMC S Cu=1cm² tp(s) |
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