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TSD772SCY 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSD772SCY 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page  TSB772S Low Vcesat PNP Transistor 1/5 Version: A07 TO-92 SOT-89 PRODUCT SUMMARY BVCBO -50V BVCEO -50V IC -3A VCE(SAT) -0.5V @ IC / IB = -2A / -200mA Features ● Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.) ● Complementary part with TSD882S Structure ● Epitaxial Planar Type ● PNP Silicon Transistor Ordering Information Part No. Package Packing TSD772SCT B0 TO-92 1Kpcs / Bulk TSD772SCT A3 TO-92 2Kpcs / Ammo TSD772SCY RM SOT-89 1Kpcs / 7” Reel Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V DC -3 Collector Current Pulse IC -7 (note) A SOT-89 0.75 Collector Power Dissipation TO-92 PD 0.625 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: Single pulse, Pw≤350us, Duty≤2% Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -50uA, IE = 0 BVCBO -50 -- -- V Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 BVCEO -50 -- -- V Emitter-Base Breakdown Voltage IE = -50uA, IC = 0 BVEBO -5 -- -- V Collector Cutoff Current VCB = -30V, IE = 0 ICBO -- -- -1 uA Emitter Cutoff Current VEB = 3V, IC = 0 IEBO -- -- -1 uA Collector-Emitter Saturation Voltage IC / IB = -2A / -200mA *VCE(SAT) -- -0.3 -0.5 V Base-Emitter Saturation Voltage IC / IB = -2A / -200mA *VBE(SAT) -- -1 -2 V DC Current Transfer Ratio VCE = -2V, IC = -1A *hFE 100 -- 500 Transition Frequency VCE =-5V, IC=-100mA, f=100MHz fT -- 80 -- MHz Output Capacitance VCB = -10V, f=1MHz Cob -- 55 -- pF * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% Pin Definition: 1. Base 2. Collector 3. Emitter Pin Definition: 1. Emitter 2. Collector 3. Base |
类似零件编号 - TSD772SCY |
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类似说明 - TSD772SCY |
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