TSC5301D datasheet(2/5 Pages) TSC

2 / 5 page

TSC5301D

High Voltage NPN Transistor with Diode

2/5

Version: A07

Thermal Performance

Parameter

Symbol

Limit

Unit

Junction to Case Thermal Resistance

RӨJC

83.3

oC/W

Junction to Ambient Thermal Resistance

RӨJA

200

oC/W

Electrical Specifications (Ta = 25oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Collector-Base Voltage

IC = 1mA, IB = 0

BVCBO

700

Collector-Emitter Breakdown Voltage

IC = 10mA, IE = 0

BVCEO

400

Emitter-Base Breakdown Voltage

IE = 1mA, IC = 0

BVEBO

Collector Cutoff Current

VCB = 700V, IE = 0

ICBO

Emitter Cutoff Current

VEB = 9V, IC = 0

IEBO

IC =0.5A, IB =0.1A

VCE(SAT)1

0.5

Collector-Emitter Saturation Voltage

IC =1A, IB =0.25A

VCE(SAT)2

1.1

IC =0.5A, IB =0.1A

VBE(SAT)1

1.1

Base-Emitter Saturation Voltage

IC =1A, IB =0.25A

VBE(SAT)2

1.2

VCE =5V, IC =10mA

hFE 1

VCE =5V, IC =400mA

hFE 2

DC Current Gain

VCE =5V, IC =1A

hFE 3

Turn On Time

tON

0.15

0.3

Storage Time

tSTG

0.5

0.9

Fall Time

VCC =250V, IC =1A,

IB1=IB2 =0.2A, tp =25uS

Duty Cycle<1%

0.2

0.4

Diode

Fall Time

IC =1A

800

Forward Voltage Drop

IC =1A

1.4

Notes:

a. Pulsed duration = 300uS, duty cycle ≤2%

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