4606 datasheet(1/7 Pages) TUOFENG

部件名	4606

功能描述	Complementary High Density Trench MOSFET

PDF	7 Pages

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制造商	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

网页	http://www.sztuofeng.com/?lang=en

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Complementary High Density Trench MOSFET

PRODUCT SUMMARY (N-Channel)

PRODUCT SUMMARY (P-Channel)

VDSS

ID

RDS(on) (m-ohm) Max

VDSS

ID

RDS(on) (m-ohm) Max

28 @ VGS = 10 V,ID=6.9A

50 @ VGS = -10V,ID=-

A

30V

6.

9A

42 @ VGS = 4.5V,ID=5.0A

-30V -

A

80@VGS = -4.5V, ID=-

Absolute Maximum Ratings (TA=25oC, unless otherwise noted)

Symbol

Parameter

N-Channel

P-Channel

Units

VDS

Drain-Source Voltage

30

-30

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current

a

6.

9

-

A

IDM

Drain Current

b (Pulsed) *1

28

-26

A

Is

Drain-Source Diode Forward Current

a

2.5

-2.3

A

Total Power Dissipation

a @TA=25oC

2.0

PD

Total Power Dissipation

a @TA=75oC

1.2

W

Tj, Tstg

Operating Junction and Storage Temperature Range

a

-55 to +150 -55 to +150

°C

RθJA

Thermal Resistance Junction to Ambient

a

63.2

°C/W

a: Surface Mounted on FR4 Board , t ≤ 5sec .

b: Pulse width limited by maximum junction temperature.

Shenzhen Tuofeng Semiconductor Technology co., LTD

4606

6.0

5.0A

6.0

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