P2003EVG

P-Channel Logic Level Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

-30

-1

-1.5

-3

±100

nA

-1

-10

50

A

25

35

15

20

24

S

1610

410

200

3.7

Ω

31.4

4.5

8.2

5.7

10

18

5

-2.1

A

-1.2

V

16

nS

7

nC

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

trr

Qrr

IF= 2A, dI/dt=100A/ms

mΩ

Drain-Source On-State

Resistance

1

VGS = -10V, ID = -9A

RDS(ON)

VGS = -4.5V, ID = -7A

V

VDS = -24V, VGS = 0V

On-State Drain Current

1

ID(ON)

VDS = -5V, VGS = -10V

Forward Voltage

1

VSD

IF = -1A, VGS = 0V

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

IS

Turn-On Delay Time

2

td(on)

VDS = -15V, ID @ -1A,

VGS = -10V,RL = 1Ω,RGS = 6Ω

nS

Rise Time

2

tr

Turn-Off Delay Time

2

td(off)

Fall Time

2

tf

Total Gate Charge

2

Qg

VDS = 0.5V(BR)DSS,

ID = -9A, VGS = -10V

nC

Gate-Source Charge

2

Qgs

Gate-Drain Charge

2

Qgd

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = -15V, f = 1MHz

pF

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Forward Transconductance

1

gfs

VDS = -10V, ID = -9A

TEST CONDITIONS

STATIC

LIMITS

UNITS

VGS = 0V, ID = -250mA

V(BR)DSS

Gate-Body Leakage

Gate Threshold Voltage

Drain-Source Breakdown Voltage

VGS(th)

PARAMETER

SYMBOL

IDSS

VDS = -20V, VGS = 0V , TJ = 125 °C

VDS = VGS, ID = -250mA

VDS = 0V, VGS = ±25V

Gate Resistance

Rg

VGS = 0V, VDS = 0V, f = 1MHz

Zero Gate Voltage Drain Current

mA

IGSS

REV 1.1

2

2015/3/30