IXFN150N65X2 datasheet(2/3 Pages) ISC

部件名	IXFN150N65X2

功能描述	N-Channel MOSFET

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

标志

2 / 3 page

ISFM1325

eq IXFN150N65X2

N-Channel MOSFET

www.iscsemi.com

ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage VGS= 0V, ID= 3mA

650

IDSS

Zero Gate Voltage Drain Current

VDS= 650V, VGS= 0V

IGSS

Gate-Body Leakage Current

VGS= ±30V, VDS= 0V

200

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID= 8mA

3.5

5.0

RDS(on)

Drain-Source On-Resistance

VGS= 10V, ID= 75A

mΩ

VSD

Forward On-Voltage

IS= 100A, VGS= 0V

1.4

PACKAGE DIMENSIONS (UNIT: mm)

DIM

Millimeter

min

max

31.40 31.60

7.70

8.10

4.20

4.40

4.20

4.40

4.10

4.40

14.90 15.10

30.10 30.30

38.00 38.40

12.00 12.60

9.35

9.65

0.74

0.84

12.30 12.70

24.40 25.00

1.90

2.10

2.92

3.32

26.60 27.00

3.80

4.20

4.95

5.45

23.70 24.30

0.10

3.50

5.50

20.15 20.45

2.50

2.70

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