LM48823, LM48823TLEVAL

SNAS464E – JUNE 2008 – REVISED OCTOBER 2010

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS

(1) (2)

Supply Voltage(1)

5.25V

Storage Temperature

−65°C to +150°C

Input Voltage

−0.3V to VDD +0.3V

Power Dissipation(3)

Internally Limited

ESD Rating(4)

8kV

ESD Rating(5)

250V

Junction Temperature

150°C

Thermal Resistance

θJA (typ) - (TLA1611A)

63.2°C/W

(1)

“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of

device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or

other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating

Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All

voltages are measured with respect to the ground pin, unless otherwise specified.

(2)

The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as

otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and

are not ensured.

(3)

The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature,

TA. The maximum allowable power dissipation is PDMAX = (TJMAX - TA) / θJA or the number given in Absolute Maximum Ratings,

whichever is lower.

(4)

Human body model, applicable std. JESD22-A114C.

(5)

Machine model, applicable std. JESD22-A115-A.

OPERATING RATINGS

Temperature Range

TMIN ≤ TA ≤ TMAX

−40°C ≤ TA ≤ +85°C

Supply Voltage

PVDD and SVDD

2.0V

≤ VDD ≤ 4.5V

I2CVDD

1.8V

≤ I2CVDD ≤ 4.5V

4

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