OPA832

SBOS266E − JUNE 2003 − REVISED AUGUST 2008

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3

ELECTRICAL CHARACTERISTICS: VS = ±5V

Boldface limits are tested at +25

°C.

At TA = 25°C, G = +2, and RL = 150Ω to GND, unless otherwise noted (see Figure 3).

OPA832ID, IDBV

TYP

MIN/MAX OVER TEMPERATURE

PARAMETER

CONDITIONS

+25

°C

+25

°C(1)

0

°C to

70

°C(2)

−40

°C to

+85

°C(2)

UNITS

MIN/

MAX

TEST

LEVEL(3)

AC PERFORMANCE (see Figure 3)

Small-Signal Bandwidth

G = +2, VO ≤ 0.5VPP

80

55

54

54

MHz

min

B

G = −1, VO ≤ 0.5VPP

99

57

56

56

MHz

min

B

Peaking at a Gain of +1

VO ≤ 0.5VPP

4.2

dB

typ

C

Slew Rate

G = +2, 2V Step

350

230

230

220

V/

µs

min

B

Rise Time

0.5V Step

4.6

ns

max

B

Fall Time

0.5V Step

4.9

ns

max

B

Settling Time to 0.1%

G = +2, 1V Step

45

ns

max

B

Harmonic Distortion

VO = 2VPP, 5MHz

2nd-Harmonic

RL = 150Ω

−64

−60

−60

−60

dBc

max

B

RL = 500Ω

−66

−63

−63

−63

dBc

max

B

3rd-Harmonic

RL = 150Ω

−57

−50

−49

−48

dBc

max

B

RL = 500Ω

−73

−64

−61

−57

dBc

max

B

Input Voltage Noise

f > 1MHz

9.2

nV/

√Hz

max

B

Input Current Noise

f > 1MHz

2.2

pA/

√Hz

max

B

NTSC Differential Gain

RL = 150Ω

0.10

%

typ

C

NTSC Differential Phase

RL = 150Ω

0.16

°

typ

C

DC PERFORMANCE(4)

Gain Error

G = +2

±0.3

±1.5

±1.6

±1.7

%

min

A

G = −1

±0.2

±1.5

±1.6

±1.7

%

max

B

Internal RF and RG

Maximum

400

455

460

462

Ω

max

A

Minimum

400

345

340

338

Ω

max

A

Average Drift

±0.1

±0.1

%/

°C

max

B

Input Offset Voltage

±1.4

±7

±8

±8.5

mV

max

A

Average Offset Voltage Drift

—

±20

±20

µV/°C

max

B

Input Bias Current

+5.5

+10

+12

+13

µA

max

A

Input Bias Current Drift

±12

±12

nA/

°C

max

B

Input Offset Current

±0.1

±1.5

±2

±2.5

µA

max

A

Input Offset Current Drift

—

±10

±10

nA/

°C

max

B

INPUT

Negative Input Voltage Range

−5.4

−5.2

−5.0

−4.9

V

max

B

Positive Input Voltage Range

3.2

3.1

3.0

2.9

V

min

A

Input Impedance

Differential Mode

10

 2.1

k

Ω pF

typ

C

Common-Mode

400

 1.2

k

Ω pF

typ

C

OUTPUT

Output Voltage Swing

RL = 1kΩ to GND

±4.9

±4.8

±4.75

±4.75

V

max

A

RL = 150Ω to GND

±4.6

±4.5

±4.45

±4.4

V

max

A

Current Output, Sinking

85

65

60

55

mA

min

A

Current Output, Sourcing

85

65

60

55

mA

min

A

Short-Circuit Current

Output Shorted to Either Supply

120

mA

typ

C

Closed-Loop Output Impedance

G = +2, f

≤ 100kHz

0.2

Ω

typ

C

POWER SUPPLY

Minimum Operating Voltage

±1.4

V

min

B

Maximum Operating Voltage

—

±5.5

±5.5

±5.5

V

max

A

Maximum Quiescent Current

VS = ±5V

4.25

4.7

5.3

5.9

mA

max

A

Minimum Quiescent Current

VS = ±5V

4.25

4.0

3.6

3.3

mA

min

A

Power-Supply Rejection Ratio (+PSRR)

Input-Referred

68

63

62

61

dB

min

A

THERMAL CHARACTERISTICS

Specification: ID, IDBV

−40 to +85

°C

typ

C

Thermal Resistance

D

SO-8

125

°C/W

typ

C

DBV SOT23-5

150

°C/W

typ

C

(1) Junction temperature = ambient for +25°C specifications.

(2) Junction temperature = ambient at low temperature limits; junction temperature = ambient +5°C at high temperature limit for over temperature specifications.

(3) Test levels: (A) 100% tested at +25°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical

value only for information.

(4) Current is considered positive out of node.