| 数据搜索系统,热门电子元器件搜索 |
|
SN54HC08VTDF2.A 数据表(PDF) 2 Page - Texas Instruments |
|
|
|||||||||||||||||||||||||||||
SN54HC08VTDF2.A 数据表(HTML) 2 Page - Texas Instruments |
|
2 / 6 page ![]() SN54HC08-DIE SCLS734 – JUNE 2013 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. BARE DIE INFORMATION BACKSIDE BOND PAD BOND PAD DIE THICKNESS BACKSIDE FINISH POTENTIAL METALLIZATION COMPOSITION THICKNESS 10.5 mils. Silicon with backgrind Floating TiW/AlCu2% 1210 nm 2 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: SN54HC08-DIE |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |