TL032ACD datasheet(25/68 Pages) TI

25 / 68 page

TL03x, TL03xA

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

SLOS180C – FEBRUARY 1997 – REVISED DECEMBER 2001

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

PARAMETER MEASUREMENT INFORMATION

typical values

Typical values presented in this data sheet represent the median (50% point) of device parametric performance.

input bias and offset current

At the picoampere bias current level typical of the TL03x and TL03xA, accurate measurement of the bias current

becomes difficult. Not only does this measurement require a picoammeter, but test-socket leakages easily can

exceed the actual device bias currents. To accurately measure these small currents, Texas Instruments uses

a two-step process. The socket leakage is measured using picoammeters with bias voltages applied but with

no device in the socket. The device is then inserted into the socket and a second test that measures both the

socket leakage and the device input bias current is performed. The two measurements are then subtracted

algebraically to determine the bias current of the device.

noise

With the increasing emphasis on low noise levels in many of today’s applications, the input noise voltage density

is performed at f = 1 kHz, unless otherwise noted.

TL032ACD 数据表(PDF) 25 Page - Texas Instruments