STM32F412RGT6P datasheet(87/201 Pages) STMICROELECTRONICS

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STM32F412xE/G

Electrical characteristics

166

6.3.6

Supply current characteristics

The current consumption is a function of several parameters and factors such as the

operating voltage, ambient temperature, I/O pin loading, device software configuration,

operating frequencies, I/O pin switching rate, program location in memory and executed

binary code.

The current consumption is measured as described in Figure 22: Current consumption

measurement scheme.

All the run-mode current consumption measurements given in this section are performed

with a reduced code that gives a consumption equivalent to CoreMark code.

VPDRhyst(2) PDR hysteresis

VBOR1

Brownout level 1

threshold

Falling edge

2.13

2.19

2.24

Rising edge

2.23

2.29

2.33

VBOR2

Brownout level 2

threshold

Falling edge

2.44

2.50

2.56

Rising edge

2.53

2.59

2.63

VBOR3

Brownout level 3

threshold

Falling edge

2.75

2.83

2.88

Rising edge

2.85

2.92

2.97

VBORhyst(2) BOR hysteresis

100

TRSTTEMPO

(2)(3)

POR reset timing

0.5

1.5

3.0

IRUSH(2)

In-Rush current on

voltage regulator power-

on (POR or wakeup from

Standby)

160

200

ERUSH(2)

In-Rush energy on

voltage regulator power-

on (POR or wakeup from

Standby)

VDD = 1.7 V, TA = 125 °C,

IRUSH = 171 mA for 31 µs

5.4

µC

1. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.

2. Guaranteed by design, not tested in production.

3. The reset timing is measured from the power-on (POR reset or wakeup from VBAT) to the instant when first

instruction is fetched by the user application code.

Table 21. Embedded reset and power control block characteristics (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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