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STM32F412RGY3P 数据表(PDF) 25 Page - STMicroelectronics |
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STM32F412RGY3P 数据表(HTML) 25 Page - STMicroelectronics |
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25 / 201 page  DocID028087 Rev 7 25/201 STM32F412xE/G Functional overview 42 it is independent from VDD or VDDA but it must be the last supply to be provided and the first to disappear. The following conditions VDDUSB must be respected: – During power-on phase (VDD < VDD_MIN), VDDUSB should be always lower than VDD – During power-down phase (VDD < VDD_MIN), VDDUSB should be always lower than VDD –VDDUSB rising and falling time rate specifications must be respected. – In operating mode phase, VDDUSB could be lower or higher than VDD: – If USB is used, the associated GPIOs powered by VDDUSB are operating between VDDUSB_MIN and VDDUSB_MAX. – If USB is not used, the associated GPIOs powered by VDDUSB are operating between VDD_MIN and VDD_MAX. Figure 6. VDDUSB connected to an external independent power supply |
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