STM32F412RGU6 datasheet(155/201 Pages) STMICROELECTRONICS

155 / 201 page

DocID028087 Rev 7

155/201

STM32F412xE/G

Electrical characteristics

166

Table 88. Asynchronous multiplexed PSRAM/NOR read timings(1)(2)

1. CL = 30 pF.

2. Based on characterization, not tested in production.

Symbol

Parameter

Min

Max

Unit

tw(NE)

FSMC_NE low time

3THCLK – 1 3THCLK + 0.5

tv(NOE_NE)

FSMC_NEx low to FSMC_NOE low

2THCLK

2THCLK + 1

ttw(NOE)

FSMC_NOE low time

THCLK – 1.5

THCLK

th(NE_NOE)

FSMC_NOE high to FSMC_NE high hold

time

tv(A_NE)

FSMC_NEx low to FSMC_A valid

0.5

tv(NADV_NE)

FSMC_NEx low to FSMC_NADV low

tw(NADV)

FSMC_NADV low time

THCLK – 0.5

THCLK + 0.5

th(AD_NADV)

FSMC_AD(address) valid hold time after

FSMC_NADV high)

th(A_NOE)

Address hold time after FSMC_NOE high

THCLK – 0.5

th(BL_NOE)

FSMC_BL time after FSMC_NOE high

tv(BL_NE)

FSMC_NEx low to FSMC_BL valid

0.5

tsu(Data_NE)

Data to FSMC_NEx high setup time

THCLK - 2

tsu(Data_NOE)

Data to FSMC_NOE high setup time

THCLK - 2

th(Data_NE)

Data hold time after FSMC_NEx high

th(Data_NOE)

Data hold time after FSMC_NOE high

Table 89. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings(1)(2)

1. CL = 30 pF.

2. Based on characterization, not tested in production.

Symbol

Parameter

Min

Max

Unit

tw(NE)

FSMC_NE low time

8THCLK - 1

8THCLK + 0.5

tw(NOE)

FSMC_NWE low time

5THCLK

5THCLK + 0.5

tsu(NWAIT_NE)

FSMC_NWAIT valid before FSMC_NEx

high

5THCLK - 1

th(NE_NWAIT)

FSMC_NEx hold time after

FSMC_NWAIT invalid

4THCLK + 1

STM32F412RGU6 数据表(PDF) 155 Page - STMicroelectronics

STM32F412RGU6 数据表(HTML) 155 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

数据表下载