| 数据搜索系统,热门电子元器件搜索 |
|
MCT6SD 数据表(PDF) 4 Page - ON Semiconductor |
|
|
|||||||||||||||||||||||||||||
MCT6SD 数据表(HTML) 4 Page - ON Semiconductor |
|
4 / 13 page ![]() ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT6, MCT61, MCT62 Rev.1.6 3 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified. Symbol Parameter Value Unit TSTG Storage Temperature -55 to +150 °C TOPR Operating Temperature -55 to +100 °C TJ Junction Temperature -55 to +125 °C TSOL Lead Solder Temperature 260 for 10 sec- onds °C PD Total Device Power Dissipation @ TA = 25°C 400 mW Derate Above 25°C 5.33 mW/°C EMITTER (Each channel) IF DC / Average Forward Input Current 60 mA IF(pk) Forward Current - Peak (PW = 1μs, 300pps) 3 A VR Reverse Input Voltage 3 V PD(EMITTER) Total Power Dissipation @ TA = 25°C 100 mW Derate Above 25°C 1.3 mW/°C DETECTOR IC Continuous Collector Current 30 mA PD(DETECTOR) Total Power Dissipation @ TA = 25°C 150 mW Derate Above 25°C 2.0 mW/°C |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |