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SN74HCS21 数据表(PDF) 4 Page - Texas Instruments

部件名 SN74HCS21
功能描述  SN74HCS21 Dual 4-Input AND Gates with Schmitt-Trigger Inputs
PDF  24 Pages
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制造商  TI2 [Texas Instruments]
网页  https://www.ti.com
标志 TI2 - Texas Instruments

SN74HCS21 数据表(HTML) 4 Page - Texas Instruments

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SN74HCS21
SCLS793A – MARCH 2020 – REVISED JUNE 2020
www.ti.com
Product Folder Links: SN74HCS21
Submit Documentation Feedback
Copyright © 2020, Texas Instruments Incorporated
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC
JS-001(1)
±4000
V
Charged-device model (CDM), per JEDEC
specification JESD22-C101(2)
±1500
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VCC
Supply voltage
2
6
V
VI
Input voltage
0
VCC
V
VO
Output voltage
0
VCC
V
Δt/Δv
Input transition rise and fall rate
Unlimited
ns/V
TA
Ambient temperature
–40
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC(1)
SN74HCS21
UNIT
PW (TSSOP)
D (SOIC)
14 PINS
14 PINS
RθJA
Junction-to-ambient thermal resistance
151.7
133.6
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
79.4
89.0
°C/W
RθJB
Junction-to-board thermal resistance
94.7
89.5
°C/W
ΨJT
Junction-to-top characterization parameter
25.2
45.5
°C/W
ΨJB
Junction-to-board characterization parameter
94.1
89.1
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
N/A
°C/W
6.5 Electrical Characteristics
over operating free-air temperature range; typical ratings measured at TA = 25°C (unless otherwise noted).
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX UNIT
VT+
Positive switching threshold
2 V
0.7
1.5
V
4.5 V
1.7
3.15
6 V
2.1
4.2
VT-
Negative switching threshold
2 V
0.3
1.0
V
4.5 V
0.9
2.2
6 V
1.2
3.0
ΔVT
Hysteresis (VT+ - VT-)
2 V
0.2
1.0
V
4.5 V
0.4
1.4
6 V
0.6
1.6
VOH
High-level output voltage
VI = VIH or VIL
IOH = -20 µA
2 V to 6 V
VCC – 0.1
VCC – 0.002
V
IOH = -6 mA
4.5 V
4
4.3
IOH = -7.8 mA
6 V
5.4
5.75
VOL
Low-level output voltage
VI = VIH or VIL
IOL = 20 µA
2 V to 6 V
0.002
0.1
V
IOL = 6 mA
4.5 V
0.18
0.30
IOL = 7.8 mA
6 V
0.22
0.33
II
Input leakage current
VI = VCC or 0
6 V
±100
±1000
nA



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