STM32F427AI datasheet(97/231 Pages) STMICROELECTRONICS

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STM32F427xx STM32F429xx

Electrical characteristics

192

6.3.5

reset and power control block characteristics

The parameters given in Table 22 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 17.

Table 22. reset and power control block characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VPVD

Programmable voltage

detector level selection

PLS[2:0]=000 (rising edge)

2.09

2.14

2.19

PLS[2:0]=000 (falling edge)

1.98

2.04

2.08

PLS[2:0]=001 (rising edge)

2.23

2.30

2.37

PLS[2:0]=001 (falling edge)

2.13

2.19

2.25

PLS[2:0]=010 (rising edge)

2.39

2.45

2.51

PLS[2:0]=010 (falling edge)

2.29

2.35

2.39

PLS[2:0]=011 (rising edge)

2.54

2.60

2.65

PLS[2:0]=011 (falling edge)

2.44

2.51

2.56

PLS[2:0]=100 (rising edge)

2.70

2.76

2.82

PLS[2:0]=100 (falling edge)

2.59

2.66

2.71

PLS[2:0]=101 (rising edge)

2.86

2.93

2.99

PLS[2:0]=101 (falling edge)

2.65

2.84

2.92

PLS[2:0]=110 (rising edge)

2.96

3.03

3.10

PLS[2:0]=110 (falling edge)

2.85

2.93

2.99

PLS[2:0]=111 (rising edge)

3.07

3.14

3.21

PLS[2:0]=111 (falling edge)

2.95

3.03

3.09

VPVDhyst(1) PVD hysteresis

100

VPOR/PDR

Power-on/power-down

reset threshold

Falling edge

1.60

1.68

1.76

Rising edge

1.64

1.72

1.80

VPDRhyst(1) PDR hysteresis

VBOR1

Brownout level 1

threshold

Falling edge

2.13

2.19

2.24

Rising edge

2.23

2.29

2.33

VBOR2

Brownout level 2

threshold

Falling edge

2.44

2.50

2.56

Rising edge

2.53

2.59

2.63

VBOR3

Brownout level 3

threshold

Falling edge

2.75

2.83

2.88

Rising edge

2.85

2.92

2.97

VBORhyst(1) BOR hysteresis

100

TRSTTEMPO

(1)(2)

POR reset temporization

0.5

1.5

3.0

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