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STM32F429NET6 数据表(PDF) 156 Page - STMicroelectronics

部件名 STM32F429NET6
功能描述  ARM Cortex-M4 32b MCUFPU, 225DMIPS, up to 2MB Flash/2564KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 20 comm. interfaces, camera & LCD-TFT
PDF  231 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F429NET6 数据表(HTML) 156 Page - STMicroelectronics

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Electrical characteristics
STM32F427xx STM32F429xx
156/231
DocID024030 Rev 6
Note:
ADC accuracy vs. negative injection current: injecting a negative current on any analog
input pins should be avoided as this significantly reduces the accuracy of the conversion
being performed on another analog input. It is recommended to add a Schottky diode (pin to
ground) to analog pins which may potentially inject negative currents.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in
Section 6.3.17 does not affect the ADC accuracy.
Figure 50. ADC accuracy characteristics
1. See also Table 76.
2. Example of an actual transfer curve.
3. Ideal transfer curve.
4. End point correlation line.
5. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.
EO = Offset Error: deviation between the first actual transition and the first ideal one.
EG = Gain Error: deviation between the last ideal transition and the last actual one.
ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.
EL = Integral Linearity Error: maximum deviation between any actual transition and the end point
correlation line.
Table 79. ADC dynamic accuracy at fADC = 36 MHz - limited test conditions(1)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
ENOB
Effective number of bits
fADC =36 MHz
VDDA = VREF+ = 3.3 V
Input Frequency = 20 KHz
Temperature = 25 °C
10.6
10.8
-
bits
SINAD
Signal-to noise and distortion ratio
66
67
-
dB
SNR
Signal-to noise ratio
64
68
-
THD
Total harmonic distortion
− 70
− 72
-
1. Guaranteed by characterization results.



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