TPS2010, TPS2011, TPS2012, TPS2013

POWER-DISTRIBUTION

SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995

5

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

recommended operating conditions

MIN

MAX

UNIT

Input voltage, VI(IN)

2.7

5.5

V

Input voltage, VI at EN

0

5.5

V

TPS2010

0

0.2

Continuous output current IO

TPS2011

0

0.6

A

Continuous output current, IO

TPS2012

0

1

A

TPS2013

0

1.5

Operating virtual junction temperature, TJ

–40

125

°C

electrical characteristics over recommended operating junction temperature range, VI(IN) = 5.5 V,

IO = rated current, EN = 0 V (unless otherwise noted)

power switch

PARAMETER

TEST CONDITIONS†

TPS2010, TPS2011

TPS2012, TPS2013

UNIT

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VI(IN) = 5.5 V,

TJ = 25°C

75

95

On state resistance

VI(IN) = 4.5 V,

TJ = 25°C

80

110

m

Ω

On-state resistance

VI(IN) = 3 V,

TJ = 25°C

120

175

m

Ω

VI(IN) = 2.7 V,

TJ = 25°C

140

215

Output leakage current

EN

VI(IN)

TJ = 25°C

0.001

1

µA

Output leakage current

EN = VI(IN)

–40

°C ≤ TJ ≤ 125°C

10

µA

t

Output rise time

VI(IN) = 5.5 V,

TJ = 25°C,

CL = 1 µF

4

ms

tr

Output rise time

VI(IN) = 2.7 V,

TJ = 25°C,

CL = 1 µF

3.8

ms

tf

Output fall time

VI(IN) = 5.5 V,

TJ = 25°C,

CL = 1 µF

3.9

ms

tf

Output fall time

VI(IN) = 2.7 V,

TJ = 25°C,

CL = 1 µF

3.5

ms

† Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.

enable input (EN)

PARAMETER

TEST CONDITIONS

TPS2010, TPS2011

TPS2012, TPS2013

UNIT

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

High-level input voltage

2.7 V

≤ VI(IN) ≤ 5.5 V

2

V

Low level input voltage

4.5 V

≤ VI(IN) ≤ 5.5 V

0.8

V

Low-level input voltage

2.7 V

≤ VI(IN) < 4.5 V

0.4

V

Input current

EN = 0 V or EN = VI(IN)

– 0.5

0.5

µA

tPLH Propagation (delay) time, low-to-high-level output

CL = 1 µF

20

ms

tPHL Propagation (delay) time, high-to-low-level output

CL = 1 µF

40

ms

current limit

PARAMETER

TEST CONDITIONS†

TPS2010, TPS2011

TPS2012, TPS2013

UNIT

TEST CONDITIONS

MIN

TYP

MAX

TJ =25°C

TPS2010

0.22

0.4

0.6

Short circuit current

TJ = 25 C,

VI(IN) = 5.5 V,

TPS2011

0.66

1.2

1.8

A

Short-circuit current

I(IN)

OUT connected to GND, device

enabled into short circuit

TPS2012

1.1

2

3

A

enabled into short circuit

TPS2013

1.65

2.6

4.5

† Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.