74VHCT573ATTR datasheet(5/10 Pages) STMICROELECTRONICS

5 / 10 page

CAPACITIVE CHARACTERISTICS

Symb ol

Parameter

T est Cond ition s

Val ue

Un it

TA =25

-40 to 85

Min.

Typ .

Max.

Min .

Max.

CIN

Input Capacitance

COUT

Output Capacitance

CPD

Power Dissipation

Capacitance (note 1)

1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto

Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD

• VCC • fIN +ICC/8 (per Latch)

DYNAMIC SWITCHING CHARACTERISTICS

Symb ol

Parameter

T est Cond ition s

Val ue

Un it

VCC

(V)

TA =25

-40 to 85

Min.

Typ .

Max.

Min .

Max.

VOLP

Dynamic Low Voltage

Quiet Output (note 1, 2)

5.0

CL =50 pF

0.6

0.9

VOLV

-0.9

-0.6

VIHD

Dynamic High Voltage

Input (note 1, 3)

5.0

2.0

VILD

Dynamic Low Voltage

Input (note 1, 3)

5.0

0.8

1) Worst case package.

2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.0V, (n -1) outputs switching and one output at GND.

3) Max number of data inputs (n) switching. (n-1) switching 0V to3.0V. Inputs under test switching: 3.0V to threshold (VILD), 0V to threshold (VIHD), f=1MHz.

TEST CIRCUIT

T EST

SW IT CH

tPLH,tPHL

Open

tPZL,tPLZ

VCC

tPZH,tPHZ

GND

CL = 15/50 pF or equivalent (includes jig and probe capacitance)

RL =R1 =1K

Ω orequivalent

RT =ZOUT of pulse generator (typically 50

Ω)

74VHCT573A

5/10

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