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10ETS16-M3 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 10ETS16-M3
功能描述  High Voltage Input Rectifier Diode
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

10ETS16-M3 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

  10ETS16-M3 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 10ETS16-M3 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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High Voltage Input Rectifier Diode
10ETS16-M3
www.iscsemi.com
1
FEATURES
· Glass Passivated Pellet Chip Junction
· Low Forward Voltage Drop
· 150℃ Max. Operating Junction Temperature
APPLICATIONS
· IEV/HEV Battery Chargers
· Input Rectification
· Main Rectification (Single or Three Phase Bridge)
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
1600
V
IF(AV)
Average Rectified Forward Current
10
A
IFSM
Non-repetitive Peak Surge Current
(10ms sine pulse)
200
A
TJ
Max. Junction Temperature
150
℃
Tstg
Storage Temperature Range
-40~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.5
℃
/W
TO-220C Package
3
1
2


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