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ADB18PS 数据表(PDF) 2 Page - STMicroelectronics |
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ADB18PS 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 3 page ![]() Symbol Parameter Test conditions Value Unit PPP Peak pulse power dissipation (one pulse) 8 / 20 µs 100 W P Power dissipation Tcase =70 °C20 W VRRM Repetitive peak reverse voltage 18 V IPP Peak pulse reverse current (one pulse) 8 / 20 µs2 A IF Forward current for one diode 0.5 A IFSM Non repetitive surge peak forward current tp = 8.3 ms tp=10 ms 8 7.5 A Tstg Storage temperature range -40 to 150 °C Tj Maximum junction temperature 150 °C ABSOLUTE MAXIMUM RATINGS (Tamb =25 °C, unless otherwise specified) APPLICATION CIRCUIT : Caller Id interface Symbol Parameter Test conditions Typ Max Unit VCL Clamping voltage IPP =2 A 8 / 20 µs50 V IRM Leakage current VRM =18 V 2 µA VF Forward voltage for one diode IF = 500 mA 1.4 V C Capacitance VR =0 V, F=1 MHz 50 pF ELECTRICAL CHARACTERISTICS (Tamb =25 °C). Symbol Parameter Value Unit Rth(j-a) Junction to ambient on FR4 (0.5 cm 2) 80 °C/W Rth(j-a) Junction to ambient on IMS (17 cm 2)30 °C/W Rth(j-c) Junction to case 4 °C/W THERMAL RESISTANCES ® ADB18PS 2/3 |
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