ESM6045AV datasheet(2/7 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthc-h

Thermal Resistance Junction-case

Max

Thermal Resistance Case-heatsink With Conductive

Grease Applied

Max

0.5

0.05

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICER #

Collector Cut-off

Current (RBE = 5

Ω)

VCE = VCEV

Tj = 100

1.5

ICEV #

Collector Cut-off

Current (VBE = -5)

VCE = VCEV

Tj = 100

IEBO #

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(SUS)* Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 0.2 A

L = 25 mH

Vclamp = 450 V

450

hFE

∗

DC Current Gain

IC = 60 A

VCE = 5 V

150

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 50 A

IB = 1 A

IC = 50 A

IB = 1 A

Tj = 100

o C

IC = 60 A

IB = 2.4 A

IC = 60 A

IB = 2.4 A

Tj = 100

o C

1.2

1.6

1.3

1.55

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 60 A

IB = 2.4 A

IC = 60 A

IB = 2.4 A

Tj = 100

o C

2.1

2.15

diC/dt

Rate of Rise of

On-state Collector

VCC = 300 V

RC = 0

tp = 3

µs

IB1 = 3.6 A

Tj = 100

450

500

µs

VCE(3

µs)••

Collector-Emitter

Dynamic Voltage

VCC = 300 V

RC = 5

Ω

IB1 = 3.6 A

Tj = 100

VCE(5

µs)••

Collector-Emitter

Dynamic Voltage

VCC = 300 V

RC = 5

Ω

IB1 = 3.6 A

Tj = 100

2.5

Storage Time

Fall Time

Cross-over Time

IC = 60 A

VCC = 50 V

VBB = -5 V

RBB = 0.3

Ω

Vclamp = 450 V

IB1 = 2.4 A

L = 0.04 mH

Tj = 100

4.6

0.4

1.2

0.6

µs

VCEW

Maximum Collector

Emitter Voltage

Without Snubber

ICWoff = 72 A

IB1 = 2.4 A

VBB = -5 V

VCC = 50 V

L = 35

µH RBB = 0.3 Ω

Tj = 125

450

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

# See test circuits in databook introduction

ESM6045AV

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