AM0912-150 datasheet(1/6 Pages) STMICROELECTRONICS

部件名	AM0912-150

功能描述	AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

PDF	6 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 6 page

September 1992

AVIONICS APPLICATIONS

RF & MICROWAVE TRANSISTORS

. 400 x .500 2LFL (S038)

hermetically sealed

.

REFRACTORY/GOLD METALLIZATION

.

EMITTER SITE BALLASTED

.

LOW THERMAL RESISTANCE

.

INPUT/OUTPUT MATCHING

.

OVERLAY GEOMETRY

.

METAL/CERAMIC HERMETIC PACKAGE

.

POUT

= 150 W MIN. WITH 7.5 dB GAIN

.

BANDWIDTH

= 255MHz

DESCRIPTION

The AM0912-150 is designed for specialized

avionics applications including Mode-S, TCAS and

JTIDS, where power is provided under pulse for-

mats utilizing short pulse widths and high burst

or overall duty cycles.

The AM0912-150 is housed in the unique BIG-

PAC

™ Hermetic Metal/Ceramic package with in-

ternal Input/Output matching structures.

PIN CONNECTION

BRANDING

0912-150

ORDER CODE

AM0912-150

ABSOLUTE MAXIMUM RATINGS (Tcase

= 25°C)

Symbol

Parameter

Value

Uni t

PDISS

Power Dissipation*

(TC

≤ 100°C)

300

W

IC

Device Current*

16.5

A

VCC

Collector-Supply Voltage*

35

V

TJ

Junction Temperature (Pulsed RF Operation)

250

°C

TSTG

Storage Temperature

− 65 to +200

°C

RTH(j-c)

Junction-Case Thermal Resistance*

0.57

°C/W

*Applies only to rated RF amplifier operation

AM0912-150

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

1/6

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