September 1992

AVIONICS APPLICATIONS

RF & MICROWAVE TRANSISTORS

.400 x .500 2LFL (S038)

hermetically sealed

.

REFRACTORY/GOLD METALLIZATION

.

EMITTER SITE BALLASTED

.

15:1 VSWR CAPABILITY

.

LOW THERMAL RESISTANCE

.

INPUT/OUTPUT MATCHING

.

OVERLAY GEOMETRY

.

METAL/CERAMIC HERMETIC PACKAGE

.

= 300 W MIN. WITH 7.0 dB GAIN

.

BANDWIDTH 255 MHz

DESCRIPTION

The AM0912-300 avionics power transistor is a

broadband, high peak pulse power device speci-

fically designed for avionics applications requiring

broad bandwidth with moderate duty cycle and

pulse width constraints such as ground/ship based

DME/TACAN.

The AM0912-300 is also designed for specialized

applications where reduced power is provided

under pulse formats utilizing short pulse widths

and high burst or overall duty cycles.

This device is capable of withstanding 15:1 VSWR

mismatch load condition at any phase angle under

full rated conditions.

The AM0912-300 is housed in the unique BIG-

PAC

™ Hermetic Metal/Ceramic package with in-

ternal Input/Output matching structures.

PIN CONNECTION

BRANDING

0912-300

ORDER CODE

AM0912-300

= 25°C)

Symbol

Parameter

Value

Unit

Power Dissipation*

≤ 100°C)

940

W

Device Current*

24

A

Collector-Supply Voltage*

50

V

Junction Temperature (Pulsed RF Operation)

250

°C

Storage Temperature

− 65 to +200

°C

Junction-Case Thermal Resistance*

0.16

°C/W

*Applies only to rated RF amplifier operation

AM0912-300

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

1/6