Rev. D 06/15

25

PFS7323-7329

www.power.com

NOTES:

A. Not tested parameter. Guaranteed by design.

B. Tested in typical Boost PFC application circuit with 22 nF capacitor between VOLTAGE MONITOR and SIGNAL GROUND pins,

and 4 M

W resistor from rectified line to the VOLTAGE MONITOR pin.

C. Normally limited by internal circuitry.

Parameter

Symbol

Conditions

SOURCE = 0 V; V

CC = 12 V,

T

JI = -40 °C to 125 °C

(Note C) (Unless Otherwise Specified)

Min

Typ

Max

Units

Qspeed Diode

DC Characteristics

Reverse Current

I

R(D)

V

R = 530 V,

T

J(D) = 25 °C

0.4

mA

V

R = 530 V,

T

J(D) = 100 °C

0.07

mA

Forward Voltage

V

F

I

F = 3 A,

T

J(D) = 25 °C

1.55

V

I

F = 3 A,

T

J(D) = 100 °C

1.47

Junction Capacitance

C

J

V

R = 10 V, 1 MHz

18

pF

Dynamic Characteristics

Reverse Recovery

Time

t

RR

di/dt = 200 A/

ms,

VR = 400 V

IF = 3 A

T

J(D) = 25 °C

25

ns

T

J(D) = 100 °C

31

Reverse Recovery

Charge

Q

RR

di/dt = 200 A/

ms,

VR = 400 V

IF = 3 A

T

J(D) = 25 °C

33.5

nC

T

J(D) = 100 °C

57

Maximum Reverse

Recovery Current

I

RRM

di/dt = 200 A/

ms,

VR = 400 V

IF = 3 A

T

J(D) = 25 °C

1.9

A

T

J(D) = 100 °C

2.5

Softness Factor = t

B/tA

S

di/dt = 200 A/

ms,

VR = 400 V

IF = 3 A

T

J(D) = 25 °C

1

-

T

J(D) = 100 °C

0.45