ISO7420E, ISO7420FE, ISO7421E, ISO7421FE

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SLLSE45F – DECEMBER 2010 – REVISED JULY 2015

6 Specifications

6.1 Absolute Maximum Ratings

(1)

MIN

MAX

UNIT

VCC

Supply voltage(2), VCC1, VCC2

–0.5

6

V

VI

Voltage at IN, OUT

–0.5

VCC + 0.5

(3)

V

IO

Output current

±15

mA

VSRG

Maximum surge immunity - Supports IEC 61000-4-5

4000

VPK

TJ(Max)

Maximum junction temperature

150

°C

Tstg

Storage temperature

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values are with respect to network ground terminal and are peak voltage values.

(3)

Maximum voltage must not exceed 6 V.

6.2 ESD Ratings

VALUE

UNIT

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±3000

V(ESD) Electrostatic discharge

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±1500

V

Machine model (MM) ANSI/ESDS5.2-1996

±200

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN

NOM

MAX

UNIT

VCC1, VCC2

Supply voltage

3.0

5.5

V

IOH

High-level output current

–4

mA

IOL

Low-level output current

4

mA

VIH

High-level input voltage

2

5.5

V

VIL

Low-level input voltage

0

0.8

V

tui

Input pulse duration

20

ns

1 / tui

Signaling rate

0

50(1)

Mbps

TJ

(2)

Junction temperature

–40

136

°C

TA

Ambient Temperature

-40

25

125

°C

(1)

Under typical conditions, these devices are capable of signaling rate > 150 Mbps.

(2)

To maintain the recommended operating conditions for TJ, see the Thermal Information table.

6.4 Thermal Information

ISO742x

THERMAL METRIC(1)

D (SOIC)

UNIT

8 PINS

RθJA

Low-K board

212

Junction-to-ambient thermal

°C/W

resistance

High-K board

116.6

RθJC(top)

Junction-to-case (top) thermal resistance

71.6

°C/W

RθJB

Junction-to-board thermal resistance

57.3

°C/W

ψJT

Junction-to-top characterization parameter

28.3

°C/W

ψJB

Junction-to-board characterization parameter

56.8

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

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