©2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002

Epitaxial Silicon Transistor

Absolute Maximum Ratings* T

C=25°C unless otherwise noted

* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These rating are based on a maximum junction temperature of 150 degrees C.

2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics T

C=25°C unless otherwise noted

* Pulse Test: Pulse Width

≤ 300ms, Duty Cycle ≤ 2%

Thermal Characteristics T

A=25°C unless otherwise noted

* Device mounted on FR-4 PCB 1.6”

× 1.6” × 0.06”

Symbol

Parameter

Ratings

Units

VDG

Drain-Gate Voltage

-20

V

VGS

Gate-Source Voltage

20

V

IGF

Forward Gate Current

10

mA

TSTG

Storage Temperature Range

-55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Off Characteristics

V(BR)GSS

Gate-Source Breakdwon Voltage

IG = 10µA, VDS = 0

20

V

IGSS

Gate Reverse Current

VGS = 10V, VDS = 0

20

nA

VGS(off)

Gate-Source Cutoff Voltage

VDS = -10V, ID = -10µA8.0

V

On Characteristics

IDSS

Zero-Gate Voltage Drain Current *

VDS = -10V, VGS = 0

-0.3

-15

mA

Small Signal Characteristics

gfs

Forward Transfer Conductance

VDS = -10V, VGS = 0, f = 1.0KHz

800

5000

µmhos

Ciss

Input Capacitance

VDS = -10V, VGS = 0, f = 1.0KHz

32

pF

Crss

Reverse Transfer Capacitance

VDS = -10V, VGS = 0, f = 1.0KHz

16

pF

Symbol

Parameter

Max.

Units

PD

Total Device Dissipation

Derate above 25

°C

350

2.8

mW

mW/

°C

RθJC

Thermal Resistance, Junction to Case

125

°C/W

RθJA

Thermal Resistance, Junction to Ambient

357

°C/W

2N3820

P-Channel General Purpose Amplifier

• This device is designed primarily for low level audio and general

purpose applications with high impedance signal sources.

• Sourced from process 89.

TO-92

1. Drain 2. Gate 3. Source

1