STPSC1206D datasheet(1/2 Pages) ISC

部件名	STPSC1206D

功能描述	Silicon Carbide Schottky Diode

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

标志

1 / 2 page

Silicon Carbide Schottky Diode

STPSC1206D

www.iscsemi.com

1

FEATURES

· High Surge Current Capability

· Dedicated to PFC Boost Diode

· Positive Temperature Coefficient

APPLICATIONS

· Solar Inverters

· Power Factor Correction

· Switch Mode Power Supplies

· Data Center

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VR

DC Blocking Voltage

600

V

IF(AV)

Average Rectified Forward Current

12

A

IFSM

Non Repetitive Peak Surge

Current

TC=25℃,

tp=10ms

50

A

TC=125℃,

tp=10ms

40

A

TJ

Junction Temperature

-40~175

℃

Tstg

Storage Temperature Range

-55~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.75

℃

/W

类似零件编号 - STPSC1206D

制造商	部件名	数据表	功能描述
STMicroelectronics	STPSC1206D	89Kb / 7P	600 V power Schottky silicon carbide diode 28-Sep-2009
STMicroelectronics	STPSC1206D	89Kb / 7P	600 V power Schottky silicon carbide diode September 2009 Rev 1

More results

类似说明 - STPSC1206D

制造商	部件名	数据表	功能描述
Infineon Technologies A...	SIDC19D60SIC3	54Kb / 4P	Silicon Carbide Schottky Diode 22.04.2004
	SDD04S60	280Kb / 9P	Silicon Carbide Schottky Diode 2004-02-11
	SDP20S30	216Kb / 8P	Silicon Carbide Schottky Diode 2001-09-07
	SDT05S60	353Kb / 8P	Silicon Carbide Schottky Diode Rev. 2.1 2005-02-17
	SDP06S60	644Kb / 9P	Silicon Carbide Schottky Diode Rev. 2.4 2008-06-02
Cree, Inc	C3D08065A	544Kb / 6P	Silicon Carbide Schottky Diode
	C4D08120E	643Kb / 6P	Silicon Carbide Schottky Diode
	C3D08065I	509Kb / 6P	Silicon Carbide Schottky Diode
	C3D03065E	941Kb / 6P	Silicon Carbide Schottky Diode
	E4D20120G	2Mb / 6P	Silicon Carbide Schottky Diode Silicon Carbide Schottky Diode