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AVS10 数据表(PDF) 3 Page - STMicroelectronics |
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AVS10 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() * For either polarity of electrode A2 voltage with reference to electrode A1. DC GENERAL ELECTRICAL CHARACTERISTICS TRIAC AVS10CB / AVS10CBI Symb ol Parameter Value Unit Min. Max. VGD VD =VDRM RL = 3.3kΩ Pulse duration> 20µs Tj = 110 °C 0.2 V VTM *ITM = 11A tp = 10ms Tj = 25 °C 1.75 V IDRM *VDRM rated Gate open Tj = 25 °C10 µA Tj = 110 °C 500 THERMAL RESISTANCES TRIAC AVS10CB / AVS10CBI Symb ol Parameter Value Unit Rth (j-a) Junction-to-ambient 60 °C/W Rth (j-c) DC Junction-to-case for DC AVS10CB 3.5 °C/W AVS10CBI 4.4 Rth (j-c) AC Junction-to-case for 360 ° conduction angle ( F = 50Hz) AVS10CB 2.6 °C/W AVS10CBI 3.3 AVS10 3/8 |
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