BAR 18 / BAS70-04 06

3/4

1

10

100

0.1

1.0

2.0

VR(V)

C(pF)

F=1MHz

Tj=25°C

Fig. 4: Junction capacitance versus reverse voltage

applied (typical values).

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

0.01

0.10

1.00

tp(s)

Zth(j-a)/Rth(j-a)

T

tp

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

Fig. 5: Relative variation of thermal impedance

junction to ambient versus pulse duration (alumine

substrate 10mm*8mm*0.5mm).

0

5

10

15

20

25

30

35

40

45

50

150

200

250

300

350

S(Cu) (mm²)

Rth(j-a) (°C/W)

P=0.25W

Fig. 6: Thermal resistance junction to ambient ver-

sus copper surface under each lead (Epoxy printed

circuit board FR4, copper thickness: 35

µm).

0

5 10 15 20 25 30 35 40 45 50 55 60 65 70

1E-3

1E-2

1E-1

1E+0

1E+1

VR(V)

IR(µA)

Tj=25°C

Tj=100°C

Fig. 2: Reverse leakage current versus reverse

voltage applied (typical values).

0

25

50

75

100

125

150

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

Tj(°C)

IR(µA)

VR=70V

Fig. 3: Reverse leakage current versus junction

temperature (typical values)