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STM32L412RBT3TR 数据表(PDF) 81 Page - STMicroelectronics

部件名 STM32L412RBT3TR
功能描述  Ultra-low-power Arm® Cortex®-M4 32-bit MCUFPU, 100DMIPS, up to 128KB Flash, 40KB SRAM, analog, ext. SMPS
PDF  192 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32L412RBT3TR 数据表(HTML) 81 Page - STMicroelectronics

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DS12469 Rev 4
81/192
STM32L412xx
Electrical characteristics
163
6.3.4
Embedded voltage reference
The parameters given in Table 24 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 21: General operating
conditions.
Table 24. Embedded internal voltage reference
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference voltage
–40 °C < TA < +130 °C
1.182
1.212
1.232
V
tS_vrefint (1)
ADC sampling time when
reading the internal reference
voltage
-4(2)
--
µs
tstart_vrefint
Start time of reference voltage
buffer when ADC is enable
--
8
12(2)
µs
IDD(VREFINTBUF)
VREFINT buffer consumption
from VDD when converted by
ADC
-
-
12.5
20(2)
µA
∆VREFINT
Internal reference voltage
spread over the temperature
range
VDD = 3 V
-
5
7.5(2)
mV
TCoeff
Temperature coefficient
–40°C < TA < +130°C
-
30
50(2)
ppm/°C
ACoeff
Long term stability
1000 hours, T = 25°C
-
300
1000(2)
ppm
VDDCoeff
Voltage coefficient
3.0 V < VDD < 3.6 V
-
250
1200(2)
ppm/V
VREFINT_DIV1
1/4 reference voltage
-
24
25
26
%
VREFINT
VREFINT_DIV2
1/2 reference voltage
49
50
51
VREFINT_DIV3
3/4 reference voltage
74
75
76
1. The shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design.



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