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STM32L412RBI3TR 数据表(PDF) 91 Page - STMicroelectronics |
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STM32L412RBI3TR 数据表(HTML) 91 Page - STMicroelectronics |
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91 / 192 page ![]() DS12469 Rev 4 91/192 STM32L412xx Electrical characteristics 163 1. All values are obtained by calculation based on measurements done without SMPS and using following parameters: SMPS input = 3.3 V, SMPS efficiency = 85%, VDD12 = 1.10 V 2. Reduced code used for characterization results provided in Table 25, Table 27, Table 29. Table 33. Typical current consumption in Run, with different codes running from Flash, ART enable (Cache ON Prefetch OFF) and power supplied by external SMPS (VDD12 = 1.00 V) Symbol Parameter Conditions(1) TYP Unit TYP Unit - Voltage scaling Code 25 °C 25 °C IDD_ALL (Run) Supply current in Run mode fHCLK = fHSE up to 48 MHz included, bypass mode PLL ON above 48 MHz all peripherals disable Reduced code(2) 0.73 mA 28 µA/MHz Coremark 0.82 32 Dhrystone 2.1 0.84 32 Fibonacci 0.80 31 While(1) 0.70 27 1. All values are obtained by calculation based on measurements done without SMPS and using following parameters: SMPS input = 3.3 V, SMPS efficiency = 85%, VDD12 = 1.00 V 2. Reduced code used for characterization results provided in Table 25, Table 27, Table 29. |
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