STM32L412R8T3PTR datasheet(79/192 Pages) STMICROELECTRONICS

79 / 192 page

DS12469 Rev 4

79/192

STM32L412xx

Electrical characteristics

163

VBOR1

Brown-out reset threshold 1

Rising edge

2.06

2.1

2.14

Falling edge

1.96

2.04

VBOR2

Brown-out reset threshold 2

Rising edge

2.26

2.31

2.35

Falling edge

2.16

2.20

2.24

VBOR3

Brown-out reset threshold 3

Rising edge

2.56

2.61

2.66

Falling edge

2.47

2.52

2.57

VBOR4

Brown-out reset threshold 4

Rising edge

2.85

2.90

2.95

Falling edge

2.76

2.81

2.86

VPVD0

Programmable voltage

detector threshold 0

Rising edge

2.1

2.15

2.19

Falling edge

2.05

2.1

VPVD1

PVD threshold 1

Rising edge

2.26

2.31

2.36

Falling edge

2.15

2.20

2.25

VPVD2

PVD threshold 2

Rising edge

2.41

2.46

2.51

Falling edge

2.31

2.36

2.41

VPVD3

PVD threshold 3

Rising edge

2.56

2.61

2.66

Falling edge

2.47

2.52

2.57

VPVD4

PVD threshold 4

Rising edge

2.69

2.74

2.79

Falling edge

2.59

2.64

2.69

VPVD5

PVD threshold 5

Rising edge

2.85

2.91

2.96

Falling edge

2.75

2.81

2.86

VPVD6

PVD threshold 6

Rising edge

2.92

2.98

3.04

Falling edge

2.84

2.90

2.96

Vhyst_BORH0

Hysteresis voltage of BORH0

Hysteresis in

continuous

mode

-20

Hysteresis in

other mode

-30

Vhyst_BOR_PVD

Hysteresis voltage of BORH

(except BORH0) and PVD

100

IDD

(BOR_PVD)(2)

BOR(3) (except BOR0) and

PVD consumption from VDD

1.1

1.6

µA

BOR(3) (except BOR0) and

PVD average consumption

from VDD with ENULP = 1

1000

VPVM1

VDDUSB peripheral voltage

monitoring

1.18

1.22

1.26

VPVM3

VDDA peripheral voltage

monitoring

Rising edge

1.61

1.65

1.69

Falling edge

1.6

1.64

1.68

Table 23. Embedded reset and power control block characteristics (continued)

Symbol

Parameter

Conditions(1)

Min

Typ

Max

Unit

STM32L412R8T3PTR 数据表(PDF) 79 Page - STMicroelectronics

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