BAV19/20/21, Rev. C

BAV19 / 20 / 21

Small Signal Diode

Absolute Maximum Ratings*

T

A = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

DO-35

Color Band Denotes Cathode

2001 Fairchild Semiconductor Corporation

Electrical Characteristics T

A = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

VRRM

Maximum Repetitive Reverse Voltage

BAV19

BAV20

BAV21

120

200

250

V

V

V

IF(AV)

Average Rectified Forward Current

200

mA

IFSM

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

Pulse Width = 1.0 microsecond

1.0

4.0

A

A

T

stg

Storage Temperature Range

-65 to +200

°C

T

J

Operating Junction Temperature

175

°C

Symbol

Parameter

Value

Units

P

D

Power Dissipation

500

mW

RθJA

Thermal Resistance, Junction to Ambient

300

°C/W

Symbol

Parameter

Test Conditions

Min

Max

Units

VR

Breakdown Voltage

BAV19

BAV20

BAV21

IR = 100 µA

I

R = 100 µA

IR = 100 µA

120

200

250

V

V

V

VF

Forward Voltage

IF = 100 mA

IF = 200 mA

1.0

1.25

V

V

IR

Reverse Current

BAV19

BAV20

BAV21

VR = 100 V

V

R = 100 V, TA = 150°C

VR = 150 V

V

R = 150 V, TA = 150°C

VR = 200 V

V

R = 200 V, TA = 150°C

100

100

100

100

100

100

nA

µA

nA

µA

nA

µA

CT

Total Capacitance

VR = 0, f = 1.0 MHz

5.0

pF

t

rr

Reverse Recovery Time

I

F = IR = 30 mA, IRR =

3.0 mA,

RL = 100Ω

50

ns