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DF06M 数据表(PDF) 3 Page - ON Semiconductor |
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DF06M 数据表(HTML) 3 Page - ON Semiconductor |
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3 / 7 page ![]() © 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com DF005M - DF10M Rev. 3.3 2 Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Note: 1. Device mounted on PCB with 0.5 inch × 0.5 inch (13 mm × 13 mm). Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit PD Power Dissipation 3.1 W RθJA Thermal Resistance, Junction-to-Ambient(1), per Leg 40 °C/W Symbol Parameter Conditions Min. Typ. Max. Unit VF Forward Voltage, per Element IF = 1.0 A 1.1 V IR Reverse Current, per Element at Rated VR TA = 25°C5.0 μA TA = 125°C500 I2t Rating for Fusing (t < 8.35 ms) 10 A2s CJ Typical Capacitance, per Leg VR = 4.0 V, f = 1.0 MHz 25 pF |
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