®

BAT 41

SMALL SIGNAL SCHOTTKY DIODE

DESCRIPTION

General purpose metal to silicon diode featuring

very low turn-on voltage and fast switching.

This device has integrated protection against ex-

cessive voltage such as electrostatic discharges.

August 1999 Ed: 1A

DO 35

(Glass)

Symbol

Parameter

Value

Unit

Repetitive Peak Reverse Voltage

100

V

Forward Continuous Current*

°C

100

mA

Repetitive Peak Forward Current*

≤ 1s

δ ≤ 0.5

350

mA

Surge non Repetitive Forward Current*

≤ 10ms

750

mA

Power Dissipation*

°C

100

mW

Storage and Junction Temperature Range

- 65 to +150

- 65 to +125

°C

°C

Maximum Lead Temperature for Soldering during 10s at 4mm

from Case

230

°C

ABSOLUTE RATINGS (limiting values)

Symbol

Test Conditions

Value

Unit

Junction-ambient*

300

°C/W

THERMAL RESISTANCE

* On infinite heatsink with 4mm lead length

≤ 300µs δ < 2%.

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

100

V

0.4

0.45

V

1

°C

0.1

µA

°C

20

STATIC CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

C

f = 1MHz

2pF

DYNAMIC CHARACTERISTICS

1/4